Jinshun Bi

Publication Activity (10 Years)

Years Active: 2014-2023
Publications (10 Years): 16

Top Topics

Silicon Nitride

Power Consumption

Top Venues

Sci. China Inf. Sci.

Microelectron. Reliab.

J. Electron. Test.

Publications

Jinshun Bi
Nanoscale Air Channel Devices for Emerging IC Applications. ICICDT (2023)
Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan, Lanlong Ji, Gaobo Xu
Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci. China Inf. Sci. 65 (6) (2022)
Qiang Wang, Yankun Wang, Ren Luo, Jianjian Wang, Lanlong Ji, Zhuangde Jiang, Christian Wenger, Zhitang Song, Sannian Song, Wei Ren, Jinshun Bi, Gang Niu
bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing. Neuromorph. Comput. Eng. 2 (4) (2022)
Jianjian Wang, Jinshun Bi, Gang Liu, Hua Bai, Kai Xi, Bo Li, Sandip Majumdar, Lanlong Ji, Ming Liu, Zhangang Zhang
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. Sci. China Inf. Sci. 64 (4) (2021)
Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. IEEE Access 8 (2020)
Linjie Fan, Jinshun Bi, Kai Xi, Gangping Yan
Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations. Sensors 20 (14) (2020)
Linjie Fan, Jinshun Bi, Kai Xi, Sandip Majumdar, Bo Li
Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations. Sensors 20 (10) (2020)
Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63 (12) (2020)
Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li, Jing Liu, Yannan Xu, Ming Liu
Total ionizing dose effects on graphene-based charge-trapping memory. Sci. China Inf. Sci. 62 (12) (2019)
Jinshun Bi
Radiation effects of floating-gate (FG) and charge-trapping (CT) Flash memory technologies. ICICDT (2019)
Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg
A single event upset tolerant latch design. Microelectron. Reliab. (2018)
Jinshun Bi, Yuan Duan, Kai Xi, Bo Li
-based resistive-random-access memory. Microelectron. Reliab. (2018)
Haibin Wang, Ao Sheng, Shiqi Wang, Jinshun Bi, Li Chen, Xiaofeng Liu
SEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology. Microelectron. Reliab. 72 (2017)
Feng Zhang, Dongyu Fan, Yuan Duan, Jin Li, Cong Fang, Yun Li, Xiaowei Han, Lan Dai, Cheng-Ying Chen, Jinshun Bi, Ming Liu, Meng-Fan Chang
A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range. A-SSCC (2017)
Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu
-based MOS capacitor. Sci. China Inf. Sci. 60 (12) (2017)
Haohao Zhang, Jinshun Bi, Haibin Wang, Hongyang Hu, Jin Li, Lanlong Ji, Ming Liu
Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. Microelectron. Reliab. 67 (2016)
Haibin Wang, Rui Liu, Li Chen, Jinshun Bi, Mulong Li, Yuanqing Li
A Novel Built-in Current Sensor for N-WELL SET Detection. J. Electron. Test. 31 (4) (2015)
Haibin Wang, Mulong Li, Li Chen, Rui Liu, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, Jinshun Bi
Single Event Resilient Dynamic Logic Designs. J. Electron. Test. 30 (6) (2014)