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Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.

Guoliang TianJinshun BiGaobo XuKai XiXueqin YangSandip MajumdarHuaxiang YinQiuxia XuWenwu Wang
Published in: Sci. China Inf. Sci. (2020)
Keyphrases
  • field effect transistors
  • steady state
  • high density
  • schottky barrier
  • mathematical analysis
  • semiconductor devices
  • markov chain
  • real time
  • quality assessment
  • error resilience
  • cmos technology