Snezana Golubovic

Publication Activity (10 Years)

Years Active: 2001-2022
Publications (10 Years): 3

Top Topics

Mechanisms Underlying

Top Venues

Microelectron. Reliab.

J. Circuits Syst. Comput.

Publications

Sandra Veljkovic, Nikola Mitrovic, Vojkan Davidovic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, Dencho Spassov, Srboljub Stankovic, Marko S. Andjelkovic, Zoran Prijic, Ivica Manic, Aneta Prijic, Goran S. Ristic, Danijel Dankovic
Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. J. Circuits Syst. Comput. 31 (18) (2022)
Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic
NBTI and irradiation related degradation mechanisms in power VDMOS transistors. Microelectron. Reliab. (2018)
Danijel Dankovic, Ivica Manic, Aneta Prijic, Vojkan Davidovic, Zoran Prijic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, D. Spassov, Ninoslav Stojadinovic
A review of pulsed NBTI in P-channel power VDMOSFETs. Microelectron. Reliab. 82 (2018)
Ivica Manic, Danijel Dankovic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic, Ninoslav Stojadinovic
NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions. Microelectron. Reliab. 51 (9-11) (2011)
Ninoslav Stojadinovic, Danijel Dankovic, Ivica Manic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic
Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress. Microelectron. Reliab. 50 (9-11) (2010)
Ivica Manic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic
Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. Microelectron. Reliab. 49 (9-11) (2009)
Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic, Ninoslav Stojadinovic
Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs. IET Circuits Devices Syst. 2 (2) (2008)
Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic
Negative bias temperature instability in n-channel power VDMOSFETs. Microelectron. Reliab. 48 (8-9) (2008)
Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic
Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs. Microelectron. Reliab. 47 (9-11) (2007)
Danijel Dankovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic
NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. Microelectron. Reliab. 46 (9-11) (2006)
Ninoslav Stojadinovic, Ivica Manic, Vojkan Davidovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Sima Dimitrijev
Effects of electrical stressing in power VDMOSFETs. Microelectron. Reliab. 45 (1) (2005)
Ninoslav Stojadinovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Ivica Manic, Snezana Golubovic
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs. Microelectron. Reliab. 45 (9-11) (2005)
Snezana Djoric-Veljkovic, Ivica Manic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic
Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs. Microelectron. Reliab. 43 (9-11) (2003)
Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic, Sima Dimitrijev
Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. Microelectron. Reliab. 42 (9-11) (2002)
Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. Microelectron. Reliab. 42 (4-5) (2002)
Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. Microelectron. Reliab. 41 (9-10) (2001)