Mahesh Siddabathula

Publication Activity (10 Years)

Years Active: 2014-2023
Publications (10 Years): 7

Top Topics

Software Reliability

Deeper Understanding

Reliability Assessment

Top Venues

Microelectron. Reliab.

Publications

D. Lipp, Z. Zhao, G. Krause, Wafa Arfaoui, Elodie Ebrard, Germain Bossu, S. Evseev, Markus Herklotz, Mahesh Siddabathula
Excellent Reliability performances of a truly 5V nBOXFET for Automotive and IOT applications. IRPS (2023)
T. L. Tan, C. W. Eng, H. Xu, J. M. Soon, E. Ebard, Mahesh Siddabathula, B. F. Phoong, K. H. Poh, M. Prabhu, X.-L. Zhao, J. M. Koo, K. Cho, G.-W. Zhang
A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures. IRPS (2022)
Germain Bossu, Shafi Syed, S. Evseev, Joris Angelo Sundaram Jerome, Wafa Arfaoui, D. Lipp, Mahesh Siddabathula
22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability. IRPS (2022)
Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam
Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area. IRPS (2021)
Pratik B. Vyas, Ninad Pimparkar, Robert Tu, Wafa Arfaoui, Germain Bossu, Mahesh Siddabathula, Steffen Lehmann, Jung-Suk Goo, Ali B. Icel
Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection. IRPS (2021)
Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula
A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology. IRPS (2020)
A. Hirler, A. Alsioufy, J. Biba, T. Lehndorff, D. Lipp, H. Lochner, Mahesh Siddabathula, S. Simon, T. Sulima, M. Wiatr, Walter Hansch
Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability. IRPS (2019)
Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel
A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node. Microelectron. Reliab. 54 (9-10) (2014)