Huilong Zhu

Publication Activity (10 Years)

Years Active: 2015-2023
Publications (10 Years): 14

Top Topics

Negatively Affect

Power Consumption

Top Venues

IEICE Electron. Express

Microelectron. J.

Sci. China Inf. Sci.

Publications

Xinhao Li, Huilong Zhu, Zhenzhen Kong, Qi Wang, Yongkui Zhang, Zhenhua Wu
On the SRAM with comb-shaped nano FETs advancing to 3 nm node and beyond. Microelectron. J. 138 (2023)
Huilong Zhu, Jing Zhang, Li Hu, Chenghao Li, Maomao Shan, Qiyu Duan
Data Augmentation Algorithm Based on Local Dynamic Transformation. AIIPCC (2022)
Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu
Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. Microelectron. J. 116 (2021)
Weixing Huang, Huilong Zhu, Yongkui Zhang, Zhenhua Wu, Kunpeng Jia, Xiaogen Yin, Yangyang Li, Chen Li, Xuezheng Ai, Qiang Huo, Junfeng Li
Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. Microelectron. J. 114 (2021)
Weixing Huang, Huilong Zhu, Kunpeng Jia, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Yongkui Zhang
The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level. CoRR (2020)
Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye
/TiN-capping/TiAl gate stacks. Sci. China Inf. Sci. 63 (2) (2020)
Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. IEICE Electron. Express 17 (7) (2020)
Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. IEICE Electron. Express 16 (21) (2019)
Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou
A novel highly reliable and low-power radiation hardened SRAM bit-cell design. IEICE Electron. Express 15 (3) (2018)
Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou
A novel self-recoverable and triple nodes upset resilience DICE latch. IEICE Electron. Express 15 (19) (2018)
Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou
A novel SEU tolerant memory cell for space applications. IEICE Electron. Express 15 (17) (2018)
Yongbo Liu, Zhengyong Zhu, Huilong Zhu, Guangxing Wan, Junfeng Li, Chao Zhao
Charge pumping test technique using CMOS ring oscillator on leakage issue. Microelectron. J. 68 (2017)
Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. Microelectron. Reliab. 62 (2016)
Guangxing Wan, Tianli Duan, Shuxiang Zhang, Lingli Jiang, Bo Tang, Chao Zhao, Huilong Zhu, Hongyu Yu
Overshoot stress impact on HfO2 high-κ layer dynamic SILC. ASICON (2015)