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Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits.

Weixing HuangHuilong ZhuYongkui ZhangZhenhua WuKunpeng JiaXiaogen YinYangyang LiChen LiXuezheng AiQiang HuoJunfeng Li
Published in: Microelectron. J. (2021)
Keyphrases
  • high speed
  • low voltage
  • delay insensitive
  • analog vlsi
  • circuit design
  • low cost
  • power consumption
  • positive and negative
  • artificial neural networks
  • artificial intelligence
  • cmos technology