Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.
Weichun LuoHong YangWenwu WangYefeng XuBo TangShangqing RenHao XuYanrong WangLuwei QiJiang YanHuilong ZhuChao ZhaoDapeng ChenTianchun YePublished in: Microelectron. Reliab. (2016)