Behzad Ebrahimi

Publication Activity (10 Years)

Years Active: 2007-2023
Publications (10 Years): 7

Top Topics

Analytical Model

Random Access Memory

Top Venues

Microelectron. Reliab.

Int. J. Circuit Theory Appl.

Circuits Syst. Signal Process.

Publications

Afshin Khaksari, Omid Akbari, Behzad Ebrahimi
BEAD: Bounded error approximate adder with carry and sum speculations. Integr. 88 (2023)
Mohammad Ghanatabadi, Behzad Ebrahimi, Omid Akbari
Accurate and Compact Approximate 4:2 Compressors with GDI Structure. Circuits Syst. Signal Process. 42 (7) (2023)
Bahareh Seyedzadeh Sany, Behzad Ebrahimi
A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications. Int. J. Circuit Theory Appl. 50 (2) (2022)
Negin Mohajeri, Behzad Ebrahimi, Massoud Dousti
HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural Network. J. Circuits Syst. Comput. 30 (15) (2021)
Erfan Shakouri, Behzad Ebrahimi, Nima Eslami, Mohammad Chahardori
Single-Ended 10T SRAM Cell with High Yield and Low Standby Power. Circuits Syst. Signal Process. 40 (7) (2021)
Ghasem Pasandi, Kolsoom Mehrabi, Behzad Ebrahimi, Sied Mehdi Fakhraei, Ali Afzali-Kusha, Massoud Pedram
Low-power data encoding/decoding for energy-efficient static random access memory design. IET Circuits Devices Syst. 13 (8) (2019)
Kolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi
Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs. Microelectron. Reliab. 65 (2016)
Behzad Ebrahimi, Reza Asadpour, Ali Afzali-Kusha, Massoud Pedram
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages. Int. J. Circuit Theory Appl. 43 (12) (2015)
Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram
High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. ISQED (2015)
Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. Integr. 50 (2015)
Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi
Robust FinFET SRAM design based on dynamic back-gate voltage adjustment. Microelectron. Reliab. 54 (11) (2014)
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi
An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. Microelectron. Reliab. 53 (5) (2013)
Behzad Ebrahimi, Ali Afzali-Kusha, Nader Sehatbakhsh
Robust polysilicon gate FinFET SRAM design using dynamic back-gate bias. DTIS (2013)
Hossein Aghababa, Behzad Ebrahimi, Mehdi Saremi, Vahid Moalemi, Behjat Forouzandeh
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems. IEICE Electron. Express 9 (10) (2012)
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi
Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability. Microelectron. Reliab. 52 (12) (2012)
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram
An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling. J. Zhejiang Univ. Sci. C 13 (1) (2012)
Hossein Aghababa, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram
Probability calculation of read failures in nano-scaled SRAM cells under process variations. Microelectron. Reliab. 52 (11) (2012)
Behzad Ebrahimi, Masoud Rostami, Ali Afzali-Kusha, Massoud Pedram
Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage. IEEE Trans. Very Large Scale Integr. Syst. 19 (10) (2011)
Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. Microelectron. Reliab. 51 (12) (2011)
Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp
A Microfabricated Phantom for Quantitative MR Perfusion Measurements: Validation of Singular Value Decomposition Deconvolution Method. IEEE Trans. Biomed. Eng. 57 (11) (2010)
Behzad Ebrahimi, Saeed Zeinolabedinzadeh, Ali Afzali-Kusha
Low Standby Power and Robust FinFET Based SRAM Design. ISVLSI (2008)
Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp
The effect of noise and depolarization on hyperpolarized tracers perfusion assessment. ISBI (2007)