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A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies.

Mohammad AnsariHassan Afzali-KushaBehzad EbrahimiZainalabedin NavabiAli Afzali-KushaMassoud Pedram
Published in: Integr. (2015)
Keyphrases
  • read write
  • disk drives
  • wide range
  • power consumption
  • high levels
  • write operations
  • data mining
  • small size
  • emerging technologies
  • flash memory
  • high noise
  • hard disk