Hassan Afzali-Kusha

Publication Activity (10 Years)

Years Active: 2015-2023
Publications (10 Years): 9

Top Topics

Energy Consumption

Digital Circuits

Top Venues

ACM Great Lakes Symposium on VLSI

IEEE J. Emerg. Sel. Topics Circuits Syst.

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Hassan Afzali-Kusha, Massoud Pedram
X-NVDLA: Runtime Accuracy Configurable NVDLA Based on Applying Voltage Overscaling to Computing and Memory Units. IEEE Trans. Circuits Syst. I Regul. Pap. 70 (5) (2023)
Hassan Afzali-Kusha, Massoud Pedram
X-NVDLA: Runtime Accuracy Configurable NVDLA based on Employing Voltage Overscaling Approach. ISQED (2022)
Hassan Afzali-Kusha, Mehdi Kamal, Massoud Pedram
Low-power Accuracy-configurable Carry Look-ahead Adder Based on Voltage Overscaling Technique. ISQED (2020)
Hassan Afzali-Kusha, Marzieh Vaeztourshizi, Mehdi Kamal, Massoud Pedram
Design Exploration of Energy-Efficient Accuracy-Configurable Dadda Multipliers With Improved Lifetime Based on Voltage Overscaling. IEEE Trans. Very Large Scale Integr. Syst. 28 (5) (2020)
Hassan Afzali-Kusha, Omid Akbari, Mehdi Kamal, Massoud Pedram
Energy and Reliability Improvement of Voltage-Based, Clustered, Coarse-Grain Reconfigurable Architectures by Employing Quality-Aware Mapping. IEEE J. Emerg. Sel. Topics Circuits Syst. 8 (3) (2018)
Hassan Afzali-Kusha, Omid Akbari, Mehdi Kamal, Massoud Pedram
Energy Consumption and Lifetime Improvement of Coarse-Grained Reconfigurable Architectures Targeting Low-Power Error-Tolerant Applications. ACM Great Lakes Symposium on VLSI (2018)
Hassan Afzali-Kusha, Alireza Shafaei, Massoud Pedram
A 125mV 2ns-access-time 16Kb SRAM design based on a 6T hybrid TFET-FinFET cell. ISQED (2018)
Hassan Afzali-Kusha, Alireza Shafaei, Massoud Pedram
Optimizing the Operating Voltage of Tunnel FET-Based SRAM Arrays Equipped with Read/Write Assist Circuitry. ACM Great Lakes Symposium on VLSI (2016)
Alireza Shafaei, Hassan Afzali-Kusha, Massoud Pedram
Minimizing the energy-delay product of SRAM arrays using a device-circuit-architecture co-optimization framework. DAC (2016)
Behzad Eghbalkhah, Mehdi Kamal, Hassan Afzali-Kusha, Ali Afzali-Kusha, M. B. Ghaznavi-Ghoushchi, Massoud Pedram
Workload and temperature dependent evaluation of BTI-induced lifetime degradation in digital circuits. Microelectron. Reliab. 55 (8) (2015)
Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram
High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. ISQED (2015)
Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. Integr. 50 (2015)