A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications.
Bahareh Seyedzadeh SanyBehzad EbrahimiPublished in: Int. J. Circuit Theory Appl. (2022)
Keyphrases
- ultra low power
- low power
- high speed
- nm technology
- cmos technology
- power consumption
- intel xeon
- power dissipation
- random access memory
- low cost
- clock frequency
- dynamic random access memory
- embedded dram
- long term
- computing power
- memory requirements
- low voltage
- image sensor
- cognitive load
- high density
- silicon on insulator
- motion vectors
- real time