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A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement.

Mehdi SaremiBehzad EbrahimiAli Afzali-KushaSaeed Mohammadi
Published in: Microelectron. Reliab. (2011)
Keyphrases
  • room temperature
  • electrical properties
  • silicon dioxide
  • metal oxide
  • power system
  • high voltage
  • leakage current
  • database
  • neural network
  • transmission line
  • electric field