Yongxun Liu

Publication Activity (10 Years)

Years Active: 2007-2023
Publications (10 Years): 2

Top Topics

Adjacent Regions

Silicon Dioxide

Top Venues

IEICE Trans. Electron.

J. Supercomput.

Publications

Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, Takahiro Mori
Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. IEICE Trans. Electron. 106 (10) (2023)
Yongxun Liu, Jingyun Zhao, Yonggang Yao, Qiuxia Cao, Jichao Cui
High-speed parallel robot dynamic modelling based on PLC. J. Supercomput. 76 (5) (2020)
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara
PBTI for N-type tunnel FinFETs. ICICDT (2015)
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. ESSDERC (2014)
Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. ESSDERC (2014)
Kazuhiko Endo, Shin-ichi O'Uchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara
Independent-Double-Gate FinFET SRAM Technology. IEICE Trans. Electron. (4) (2013)
Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota
Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. ESSDERC (2013)
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. ESSDERC (2013)
Hideo Sakai, Shin-ichi O'Uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro
High-Frequency Precise Characterization of Intrinsic FinFET Channel. IEICE Trans. Electron. (4) (2012)
Shin-ichi O'Uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara
A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology. IEICE Trans. Electron. (4) (2012)
Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara
Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET. CICC (2010)
Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara
0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits. ESSCIRC (2010)
Shin-ichi O'Uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki
FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. IEICE Trans. Electron. (4) (2008)
Shin-ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki
Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology. CICC (2007)