Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration.
Shinji MigitaTakashi MatsukawaTakahiro MoriKoichi FukudaYukinori MoritaWataru MizubayashiKazuhiko EndoYongxun LiuShin-ichi O'UchiMeishoku MasaharaHiroyuki OtaPublished in: ESSDERC (2014)