Wataru Mizubayashi

Publication Activity (10 Years)

Years Active: 2005-2020
Publications (10 Years): 2

Top Topics

Adjacent Regions

Gate Dielectrics

Field Effect Transistors

Top Venues

Publications

Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo
Analysis of charge-to-hot-carrier degradation in Ge pFinFETs. IRPS (2020)
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara
PBTI for N-type tunnel FinFETs. ICICDT (2015)
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. ESSDERC (2014)
Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. ESSDERC (2014)
Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota
Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. ESSDERC (2013)
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. ESSDERC (2013)
Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota
Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks. ESSDERC (2012)
Wataru Mizubayashi, Naoki Yasuda, Kenji Okada, Hiroyuki Ota, Hirokazu Hisamatsu, Kunihiko Iwamoto, Koji Tominaga, Katsuhiko Yamamoto, Tsuyoshi Horikawa, Toshihide Nabatame
Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics. Microelectron. Reliab. 45 (7-8) (2005)
Hideki Murakami, Wataru Mizubayashi, Hirokazu Yokoi, Atsushi Suyama, Seiichi Miyazaki
Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation. IEICE Trans. Electron. (4) (2005)