Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation.
Hideki MurakamiWataru MizubayashiHirokazu YokoiAtsushi SuyamaSeiichi MiyazakiPublished in: IEICE Trans. Electron. (2005)