Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance.
Yukinori MoritaTakahiro MoriShinji MigitaWataru MizubayashiKoichi FukudaTakashi MatsukawaKazuhiko EndoShin-ichi O'UchiYongxun LiuMeishoku MasaharaHiroyuki OtaPublished in: ESSDERC (2014)