FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction.
Shin-ichi O'UchiMeishoku MasaharaKazuhiko EndoYongxun LiuTakashi MatsukawaKunihiro SakamotoToshihiro SekigawaHanpei KoikeEiichi SuzukiPublished in: IEICE Trans. Electron. (2008)