Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist.
Shimpei NishiyamaKimihiko KatoYongxun LiuRaisei MizokuchiJun YonedaTetsuo KoderaTakahiro MoriPublished in: IEICE Trans. Electron. (2023)