Takeshi Ohshima

Publication Activity (10 Years)

Years Active: 2014-2023
Publications (10 Years): 5

Top Topics

Multimedia Processing

Gallium Arsenide

Electron Microscopy

Top Venues

Microelectron. Reliab.

Publications

H. Takahashi, Y. Okamoto, Toshiki Hamada, Y. Komura, S. Watanabe, K. Tsuda, H. Sawai, Takanori Matsuzaki, Yoshinori Ando, Tatsuya Onuki, H. Kunitake, Shunpei Yamazaki, D. Kobayashi, A. Ikuta, Takahiro Makino, Takeshi Ohshima
Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory. IRPS (2023)
K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, Takaho Tanigawa, Shoji Ikeda, Takamitsu Shinada, Hiroki Koike, Tetsuo Endoh, T. Makino, Takeshi Ohshima
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability. IRPS (2022)
Yuta Masuyama, Katsumi Suzuki, Akira Hekizono, Mitsuyasu Iwanami, Mutsuko Hatano, Takayuki Iwasaki, Takeshi Ohshima
Gradiometer Using Separated Diamond Quantum Magnetometers. Sensors 21 (3) (2021)
Masataka Higashiwaki, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, Ravikiran Lingaparthi, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Shinya Watanabe, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai
Recent Advances in Ga2O3 MOSFET Technologies. DRC (2018)
Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. Microelectron. Reliab. 81 (2018)
Hiroshi Okada, Yuki Okada, Hiroto Sekiguchi, Akihiro Wakahara, Shin-ichiro Sato, Takeshi Ohshima
Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence. IEICE Trans. Electron. (5) (2014)