Takayuki Hisaka

Publication Activity (10 Years)

Years Active: 1999-2018
Publications (10 Years): 1

Top Topics

Structuring Elements

Electron Microscopy

Top Venues

Microelectron. Reliab.

Publications

Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. Microelectron. Reliab. 81 (2018)
Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Yoshikazu Terai, Yasufumi Fujiwara
Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy. IEICE Electron. Express 9 (20) (2012)
Takayuki Hisaka, Hajime Sasaki, Takayuki Kato, Ko Kanaya, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo
Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC. IEICE Electron. Express 7 (8) (2010)
Takayuki Hisaka, Hajime Sasaki, Yoichi Nogami, Kenji Hosogi, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo, Shigehiko Hasegawa, Hajime Asahi
Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions. Microelectron. Reliab. 49 (12) (2009)
Takayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi
Degradation mechanisms of GaAs PHEMTs in high humidity conditions. Microelectron. Reliab. 45 (12) (2005)
Akira Ohta, Norio Higashisaka, Tetsuya Heima, Takayuki Hisaka, Hirofumi Nakano, Ryuji Ohmura, Tadashi Takagi, Noriyuki Tanino
A 12-ps-resolution digital variable-delay macro cell on GaAs 100 K-gates gate array using a meshed air bridge structure. IEEE J. Solid State Circuits 34 (1) (1999)