Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence.
Hiroshi OkadaYuki OkadaHiroto SekiguchiAkihiro WakaharaShin-ichiro SatoTakeshi OhshimaPublished in: IEICE Trans. Electron. (2014)