Onefold coordinated oxygen atom: an electron trap in the silicon oxide.
V. A. GritsenkoA. V. ShaposhnikovYu. N. NovikovA. P. BarabanHei WongG. M. ZhidomirovM. RogerPublished in: Microelectron. Reliab. (2003)
Keyphrases
- silicon dioxide
- high temperature
- van der waals
- si sio
- transmission electron microscopy
- metal oxide
- electrical properties
- electron microscopy
- x ray
- silicon nitride
- high speed
- gate dielectrics
- solid state
- multi agent
- leakage current
- electron beam
- high resolution
- cooperative
- gate insulator
- knowledge base
- electron microscope
- thin film
- field effect transistors
- high density
- numerical simulations
- artificial neural networks
- expert systems
- case study