Gate oxide failures due to anomalous stress from HBM ESD testers.
Charvaka DuvvuryRobert SteinhoffGianluca BoselliVijay ReddyHans KunzSteve MarumRoger ClinePublished in: Microelectron. Reliab. (2006)
Keyphrases
- silicon dioxide
- leakage current
- field effect transistors
- anomaly detection
- test cases
- anomalous behavior
- root cause
- fuel cell
- detecting anomalous
- electrical properties
- electron microscopy
- steady state
- failure rate
- room temperature
- failure detection
- neural network
- mathematical analysis
- high density
- low voltage
- database systems
- transmission electron microscopy
- case study
- databases
- data mining
- website
- three dimensional
- failure recovery
- database