Tatsuya Ohguro

Publication Activity (10 Years)

Years Active: 1998-2018
Publications (10 Years): 3

Top Topics

Evaluation Methodology

Cmos Image Sensor

Parallel Processing

Top Venues

IEICE Trans. Electron.

Publications

Toru Sugiyama, Kohei Oasa, Yasunobu Saito, Akira Yoshioka, Takuo Kikuchi, Aya Shindome, Tatsuya Ohguro, Takeshi Hamamoto
Evaluation methodology for current collapse phenomenon of GaN HEMTs. IRPS (2018)
H. Sasaki, A. Mochizuki, Y. Sugiura, R. Hasumi, K. Eda, Y. Egawa, Hirofumi Yamashita, K. Honda, Tatsuya Ohguro, Hisayo S. Momose, H. Ootani, Yoshiaki Toyoshima, T. Asami
2.2um BSI CMOS image sensor with two layer photo-detector. IMSE (2015)
Tatsuya Ohguro, Satoshi Inaba, Akio Kaneko, Kimitoshi Okano
Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits. IEICE Trans. Electron. (6) (2015)
Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. IEICE Trans. Electron. (6) (2009)
Tamio Ikehashi, Takayuki Miyazaki, Hiroaki Yamazaki, Atsushi Suzuki, Etsuji Ogawa, Shinji Miyano, Tomohiro Saito, Tatsuya Ohguro, Takeshi Miyagi, Yoshiaki Sugizaki, Nobuaki Otsuka, Hideki Shibata, Yoshiaki Toyoshima
An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation. ISSCC (2008)
Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Math. Comput. Simul. 79 (4) (2008)
Shizunori Matsumoto, Hiroaki Ueno, Satoshi Hosokawa, Toshihiko Kitamura, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama
-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation. IEICE Trans. Electron. (2) (2005)
Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto
MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. CICC (2005)
Nobuyuki Itoh, Tatsuya Ohguro, Kazuhiro Katoh, Hideki Kimijima, Shin-ichiro Ishizuka, Kenji Kojima, Hiroyuki Miyakawa
Scalable Parasitic Components Model of CMOS for RF Circuit Design. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (2) (2003)
Qiuting Huang, Francesco Piazza, Paolo Orsatti, Tatsuya Ohguro
The impact of scaling down to deep submicron on CMOS RF circuits. IEEE J. Solid State Circuits 33 (7) (1998)