Takahiro Iizuka

Publication Activity (10 Years)

Years Active: 2005-2023
Publications (10 Years): 9

Top Topics

High Frequencies

Negative Impact

Graduate School

Power Consumption

Top Venues

IEICE Trans. Electron.

Publications

Subhajit Das, Takahiro Iizuka
Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits. ISDCS (2023)
Soumajit Ghosh, Takahiro Iizuka
History effect investigation in SOI MOSFET for minimizing impact on circuit performance. ISDCS (2021)
Abhishek Kar, Mitiko Miura-Mattausch, Mainak Sengupta, Dondee Navarro, Hideyuki Kikuchihara, Takahiro Iizuka, Hafizur Rahaman, Hans Jürgen Mattausch
Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation. IEEE Access 9 (2021)
Fernando Ávila Herrera, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Yoko Hirano, Hans Jürgen Mattausch
Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation. ISDCS (2020)
Takahiro Iizuka
Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs. ISDCS (2020)
Soumajit Ghosh, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Hafizur Rahaman, Hans Jürgen Mattausch
History Effect on Circuit Performance of SOI-MOSFETs. ISDCS (2020)
Arnab Mukhopadhyay, Tapas Kumar Maiti, Sandip Bhattacharya, Takahiro Iizuka, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hafizur Rahaman, Sadayuki Yoshitomi, Dondee Navarro, Hans Jürgen Mattausch
Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs. IEICE Trans. Electron. (6) (2019)
Takahiro Iizuka, Hiroyuki Hashigami, Mitiko Miura-Mattausch, Hans Jürgen Mattausch
Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs. ISDCS (2019)
Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tahahiro Kajiwara, Yuta Tanimoto, Atsushi Saito, Takahiro Iizuka, Dondee Navarro, Hans Jürgen Mattausch
Compact Modeling for Power Efficient Circuit Design. ESSDERC (2018)
Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. IEICE Trans. Electron. (10) (2013)
Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. IEICE Trans. Electron. (5) (2013)
Takahiro Iizuka, Takashi Sakuda, Yasunori Oritsuki, Akihiro Tanaka, Masataka Miyake, Hideyuki Kikuchihara, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch
Compact Modeling of Expansion Effects in LDMOS. IEICE Trans. Electron. (11) (2012)
Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, Yasuyuki Sahara, Teruhiko Hoshida, Toshiro Tsukada
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation. IEICE Trans. Electron. (5) (2009)
Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. IEICE Trans. Electron. (6) (2009)
Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Math. Comput. Simul. 79 (4) (2008)
Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto
MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. CICC (2005)