Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.
Chenyue MaHans Jürgen MattauschMasataka MiyakeTakahiro IizukaKazuya MatsuzawaSeiichiro YamaguchiTeruhiko HoshidaAkinori KinoshitaTakahiko ArakawaJin HeMitiko Miura-MattauschPublished in: IEICE Trans. Electron. (2013)