Chenyue Ma

Publication Activity (10 Years)

Years Active: 2008-2023
Publications (10 Years): 6

Top Topics

Signal Dependent

Top Venues

Publications

Peng Zou, Zhijie Cai, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen
Incremental 3-D Global Routing Considering Cell Movement and Complex Routing Constraints. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42 (6) (2023)
Huimin Wang, Xingyu Tong, Chenyue Ma, Runming Shi, Jianli Chen, Kun Wang, Jun Yu, Yao-Wen Chang
CNN-inspired analytical global placement for large-scale heterogeneous FPGAs. DAC (2022)
Chenyue Ma, Yifeng Xiao, Sifei Wang, Jun Yu, Jianli Chen
CongestNN: An Bi-Directional Congestion Prediction Framework for Large-Scale Heterogeneous FPGAs. ASICON (2021)
Peng Zou, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen
Late Breaking Results: Incremental 3D Global Routing Considering Cell Movement. DAC (2021)
Lining Zhang, Chenyue Ma, Mansun Chan
A universal approach for signal dependent circuit reliability simulation. ASICON (2017)
Haoyuan Jiang, Chenyue Ma, Lining Zhang, Mansun Chan
Concurrent device/circuit aging for general reliability simulations. ISIC (2016)
Peng Wu, Chenyue Ma, Lining Zhang, Xinnan Lin, Mansun Chan
Investigation of nitrogen enhanced NBTI effect using the universal prediction model. IRPS (2015)
Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. IEICE Trans. Electron. (10) (2013)
Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. Microelectron. Reliab. 51 (2) (2011)
Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device. Microelectron. Reliab. 50 (8) (2010)
Chenyue Ma, Hao Wang, Xiufang Zhang, Frank He, Yadong He, Xing Zhang, Xinnan Lin
Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits. ISQED (2010)
Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. ISQED (2009)
Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang
Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure. ISQED (2008)