Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations.
Tatsuya EzakiDondee NavarroYouichi TakedaNorio SadachikaGaku SuzukiMitiko Miura-MattauschHans Jürgen MattauschTatsuya OhguroTakahiro IizukaMasahiko TaguchiShigetaka KumashiroShunsuke MiyamotoPublished in: Math. Comput. Simul. (2008)