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Norio Sadachika
Publication Activity (10 Years)
Years Active: 2008-2011
Publications (10 Years): 0
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Publications
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Norio Sadachika
,
Shu Mimura
,
Akihiro Yumisaki
,
Koh Johguchi
,
Akihiro Kaya
,
Mitiko Miura-Mattausch
,
Hans Jürgen Mattausch
Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design.
IEICE Trans. Electron.
(3) (2011)
Koh Johguchi
,
Akihiro Kaya
,
Shinya Izumi
,
Hans Jürgen Mattausch
,
Tetsushi Koide
,
Norio Sadachika
Measurement-Based Ring Oscillator Variation Analysis.
IEEE Des. Test Comput.
27 (5) (2010)
Ryosuke Inagaki
,
Norio Sadachika
,
Dondee Navarro
,
Mitiko Miura-Mattausch
,
Yasuaki Inoue
A GIDL-Current Model for Advanced MOSFET Technologies without Binning.
IPSJ Trans. Syst. LSI Des. Methodol.
2 (2009)
Ryosuke Inagaki
,
Norio Sadachika
,
Mitiko Miura-Mattausch
,
Yasuaki Inoue
A PN Junction-Current Model for Advanced MOSFET Technologies.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci.
(4) (2009)
Masataka Miyake
,
Daisuke Hori
,
Norio Sadachika
,
Uwe Feldmann
,
Mitiko Miura-Mattausch
,
Hans Jürgen Mattausch
,
Takahiro Iizuka
,
Kazuya Matsuzawa
,
Yasuyuki Sahara
,
Teruhiko Hoshida
,
Toshiro Tsukada
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation.
IEICE Trans. Electron.
(5) (2009)
Masataka Miyake
,
Daisuke Hori
,
Norio Sadachika
,
Uwe Feldmann
,
Mitiko Miura-Mattausch
,
Hans Jürgen Mattausch
,
Tatsuya Ohguro
,
Takahiro Iizuka
,
Masahiko Taguchi
,
Shunsuke Miyamoto
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors.
IEICE Trans. Electron.
(6) (2009)
Norio Sadachika
,
Takahiro Murakami
,
Hideki Oka
,
Ryou Tanabe
,
Hans Jürgen Mattausch
,
Mitiko Miura-Mattausch
Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization.
IEICE Trans. Electron.
(8) (2008)
Tatsuya Ezaki
,
Dondee Navarro
,
Youichi Takeda
,
Norio Sadachika
,
Gaku Suzuki
,
Mitiko Miura-Mattausch
,
Hans Jürgen Mattausch
,
Tatsuya Ohguro
,
Takahiro Iizuka
,
Masahiko Taguchi
,
Shigetaka Kumashiro
,
Shunsuke Miyamoto
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations.
Math. Comput. Simul.
79 (4) (2008)