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Hiroaki Ueno
Publication Activity (10 Years)
Years Active: 2002-2014
Publications (10 Years): 0
Top Topics
Power Electronics
St Century
Matrix Representation
Transfer Function
Top Venues
ISSCC
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Publications
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Shuichi Nagai
,
Yasuhiro Yamada
,
Noboru Negoro
,
Hiroyuki Handa
,
Yuji Kudoh
,
Hiroaki Ueno
,
Masahiro Ishida
,
Nobuyuki Otuska
,
Daisuke Ueda
30.5 A GaN 3×3 matrix converter chipset with Drive-by-Microwave technologies.
ISSCC
(2014)
Dondee Navarro
,
Takeshi Mizoguchi
,
Masami Suetake
,
Kazuya Hisamitsu
,
Hiroaki Ueno
,
Mitiko Miura-Mattausch
,
Hans Jürgen Mattausch
,
Shigetaka Kumashiro
,
Tetsuya Yamaguchi
,
Kyoji Yamashita
,
Noriaki Nakayama
A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential.
IEICE Trans. Electron.
(5) (2005)
Shizunori Matsumoto
,
Hiroaki Ueno
,
Satoshi Hosokawa
,
Toshihiko Kitamura
,
Mitiko Miura-Mattausch
,
Hans Jürgen Mattausch
,
Tatsuya Ohguro
,
Shigetaka Kumashiro
,
Tetsuya Yamaguchi
,
Kyoji Yamashita
,
Noriaki Nakayama
-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation.
IEICE Trans. Electron.
(2) (2005)
Kazuya Hisamitsu
,
Hiroaki Ueno
,
Masayasu Tanaka
,
Daisuke Kitamaru
,
Mitiko Miura-Mattausch
,
Hans Jürgen Mattausch
,
Shigetaka Kumashiro
,
Tetsuya Yamaguchi
,
Kyoji Yamashita
,
Noriaki Nakayama
Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design.
ASP-DAC
(2003)
Mitiko Miura-Mattausch
,
Hiroaki Ueno
,
Hans Jürgen Mattausch
,
Shigetaka Kumashiro
,
Tetsuya Yamaguchi
,
Kyoji Yamashita
,
Noriaki Nakayama
Circuit Simulation Models for Coming MOSFET Generations.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci.
(4) (2002)