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A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential.

Dondee NavarroTakeshi MizoguchiMasami SuetakeKazuya HisamitsuHiroaki UenoMitiko Miura-MattauschHans Jürgen MattauschShigetaka KumashiroTetsuya YamaguchiKyoji YamashitaNoriaki Nakayama
Published in: IEICE Trans. Electron. (2005)
Keyphrases
  • probabilistic model
  • formal model
  • similarity measure
  • multiscale
  • prior knowledge
  • cost function
  • multi view
  • computational model
  • theoretical framework
  • experimental data
  • conceptual model
  • surface model
  • global shape