-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation.

Shizunori Matsumoto Hiroaki Ueno Satoshi Hosokawa Toshihiko Kitamura Mitiko Miura-Mattausch Hans Jürgen Mattausch Tatsuya Ohguro Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama

Published in: IEICE Trans. Electron. (2005)

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