Masaru Sato

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 8

Top Topics

Metal Oxide Semiconductor

High Efficiency

Spectrum Analysis

Top Venues

IEICE Trans. Electron.

Publications

Takuma Kinoshita, Yuki Shinhama, Masaru Sato, Futoshi Kuroki
An X-band Spatial Power Combining Using Rectangular Waveguide with Dielectric Lens. RWS (2024)
Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106 (11) (2023)
Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. IEICE Trans. Electron. 106 (10) (2023)
Masaru Sato, Yoshitaka Niida, Atsushi Yamada, Junji Kotani, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura
Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers. IEICE Trans. Electron. (10) (2021)
Shinpei Yamashita, Michihiko Suhara, Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto, Kiyoto Asakawa
Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz. IEICE Trans. Electron. (6) (2019)
Tsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto
Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. ESSDERC (2019)
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. (5) (2017)
Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara
300-GHz Amplifier in 75-nm InP HEMT Technology. IEICE Trans. Electron. (5) (2016)
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. IEICE Trans. Electron. (12) (2015)
Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe
Millimeter-Wave GaN HEMT for Power Amplifier Applications. IEICE Trans. Electron. (10) (2014)
Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara
Submillimeter-wave InP HEMT amplifiers with current-reuse topology. RWS (2013)
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Yoichi Kawano, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (2) (2012)
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors. ESSCIRC (2010)
Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
A 77GHz transceiver in 90nm CMOS. ISSCC (2009)
Masaru Sato, Tatsuya Hirose, Koji Mizuno
Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager. IEICE Trans. Electron. (9) (2009)
Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
60 and 77GHz Power Amplifiers in Standard 90nm CMOS. ISSCC (2008)
Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique. IEEE J. Solid State Circuits 40 (10) (2005)
Hisao Shigematsu, Masaru Sato, Tatsuya Hirose, Yuu Watanabe
modulator driver. IEEE J. Solid State Circuits 37 (9) (2002)
Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. IEEE J. Solid State Circuits 36 (9) (2001)