Yasuhiro Nakasha

Publication Activity (10 Years)

Years Active: 2002-2023
Publications (10 Years): 9

Top Topics

Spectrum Analysis

Metal Oxide Semiconductor

Top Venues

IEICE Trans. Electron.

Publications

Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106 (11) (2023)
Tomoyuki Akiyama, Motoyuki Nishizawa, Akio Sugama, Yasuhiro Nakasha, Shinsuke Tanaka, Yu Tanaka, Takeshi Hoshida
First Demonstration of Crosstalk-Free (< -38.5 dB) 32-ch DWDM Demultiplexer on Standard Si PIC Platform. OFC (2022)
Tomoyuki Akiyama, Motoyuki Nishizawa, Akio Sugama, Yasuhiro Nakasha, Shinsuke Tanaka, Yu Tanaka, Shoichiro Oda, Takeshi Hoshida
Demonstration of Crosstalk-Free WDM Demultiplexing on Si Nanowire PIC Controlled by Si CMOS ASIC. OFC (2021)
Tomoyuki Akiyama, Motoyuki Nishizawa, Akio Sugama, Yasuhiro Nakasha, Shinsuke Tanaka, Yu Tanaka, Takeshi Hoshida
Temperature-Tolerant Crosstalk-Free WDM Demultiplexing Using Controller-Integrated Cascaded AMZ Triplet (CAT) on Si Nano-Waveguide PIC Platform. ECOC (2021)
Tomoyuki Akiyama, Shoichiro Oda, Seok-Hwan Jeong, Yasuhiro Nakasha, Yu Tanaka, Takeshi Hoshida
A Demultiplexer Immune from Fabrication-Error Impairments as an Enabler of Compact High-Channel-Count (> 64 ch) Dense WDM Systems on Low-End Si PIC Platforms. OECC/PSC (2019)
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. (5) (2017)
Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara
300-GHz Amplifier in 75-nm InP HEMT Technology. IEICE Trans. Electron. (5) (2016)
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. IEICE Trans. Electron. (12) (2015)
Yasuhiro Nakasha
Foreword. IEICE Trans. Electron. (12) (2015)
Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara
Submillimeter-wave InP HEMT amplifiers with current-reuse topology. RWS (2013)
Yasuhiro Nakasha, Naoki Hara, Kiyomichi Araki
Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter. IEICE Trans. Electron. (10) (2011)
Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Shinji Yamaura, Tsuyoshi Takahashi, Kozo Makiyama, Tatsuya Hirose
A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology. IEEE J. Solid State Circuits 42 (3) (2007)
Yasuhiro Nakasha, Toshihide Suzuki, Hideki Kano, Kouji Tsukashima, Akio Ohya, Ken Sawada, Kozo Makiyama, Tsuyoshi Takahashi, Masahiro Nishi, Tatsuya Hirose, Masahiko Takikawa, Yuu Watanabe
A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology. IEEE J. Solid State Circuits 37 (12) (2002)