Kazukiyo Joshin

Publication Activity (10 Years)

Years Active: 2003-2017
Publications (10 Years): 1

Top Topics

Imaging Systems

Signal Noise Ratio

Disaster Recovery

Top Venues

IEICE Trans. Electron.

GLOBECOM Workshops

Publications

Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. (5) (2017)
Ken-ichi Kitayama, Yuki Yoshida, Yuya Yamaguchi, Hirochika Nakajima, Kohsuke Nishimura, Abdelmoula Bekkali, Masayuki Oishi, Hidenori Iwai, Kazuya Ota, Norihiko Sato, Naoyasu Kamiya, Keiji Tanaka, Yoichi Oikawa, Kazukiyo Joshin, Nobuhiko Shibagaki, Kaoru Higuma, Satoshi Oikawa, Junichiro Ichikawa, Atsushi Kanno, Tetsuya Kawanishi
High-Speed Optical and Millimeter-Wave Wireless Link for Disaster Recovery. GLOBECOM Workshops (2015)
Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe
Millimeter-Wave GaN HEMT for Power Amplifier Applications. IEICE Trans. Electron. (10) (2014)
Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
A 77GHz transceiver in 90nm CMOS. ISSCC (2009)
Kazukiyo Joshin
Special Section on Microwave and Millimeter-wave Technologies. IEICE Trans. Electron. (11) (2008)
Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
60 and 77GHz Power Amplifiers in Standard 90nm CMOS. ISSCC (2008)
Toshihide Kikkawa, Kazukiyo Joshin
High Power GaN-HEMT for Wireless Base Station Applications. IEICE Trans. Electron. (5) (2006)
Satoshi Masuda, Tsuyoshi Takahashi, Kazukiyo Joshin
An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system. IEEE J. Solid State Circuits 38 (9) (2003)