Toshihide Suzuki

Publication Activity (10 Years)

Years Active: 2001-2018
Publications (10 Years): 6

Top Topics

Ultra Low Power

Spectrum Analysis

Top Venues

IEICE Trans. Electron.

Publications

Korkut Kaan Tokgoz, Shotaro Maki, Jian Pang, Noriaki Nagashima, Ibrahim Abdo, Seitaro Kawai, Takuya Fujimura, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Kenichi Okada, Akira Matsuzawa
A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver. ISSCC (2018)
Korkut Kaan Tokgoz, Shotaro Maki, Seitarou Kawai, Noriaki Nagashima, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Kenichi Okada, Akira Matsuzawa
W-band ultra-high data-rate 65nm CMOS wireless transceiver. ASP-DAC (2017)
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. (5) (2017)
Korkut Kaan Tokgoz, Shotaro Maki, Seitaro Kawai, Noriaki Nagashima, Jun Emmei, Masato Dome, Hisashi Kato, Jian Pang, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Yuuki Seo, Kimsrun Lim, Shinji Sato, Ning Li, Kengo Nakata, Kenichi Okada, Akira Matsuzawa
13.3 A 56Gb/s W-band CMOS wireless transceiver. ISSCC (2016)
Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara
300-GHz Amplifier in 75-nm InP HEMT Technology. IEICE Trans. Electron. (5) (2016)
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. IEICE Trans. Electron. (12) (2015)
Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara
Submillimeter-wave InP HEMT amplifiers with current-reuse topology. RWS (2013)
Kouichi Kanda, Yoichi Kawano, Takao Sasaki, Noriaki Shirai, Tetsuro Tamura, Shigeaki Kawai, Masahiro Kudo, Tomotoshi Murakami, Hiroyuki Nakamoto, Nobumasa Hasegawa, Hideki Kano, Nobuhiro Shimazui, Akiko Mineyama, Kazuaki Oishi, Masashi Shima, Naoyoshi Tamura, Toshihide Suzuki, Toshihiko Mori, Kimitoshi Niratsuka, Shinji Yamaura
A fully integrated triple-band CMOS power amplifier for WCDMA mobile handsets. ISSCC (2012)
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Yoichi Kawano, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (2) (2012)
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors. ESSCIRC (2010)
Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
A 77GHz transceiver in 90nm CMOS. ISSCC (2009)
Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
60 and 77GHz Power Amplifiers in Standard 90nm CMOS. ISSCC (2008)
Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Shinji Yamaura, Tsuyoshi Takahashi, Kozo Makiyama, Tatsuya Hirose
A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology. IEEE J. Solid State Circuits 42 (3) (2007)
Toshihide Suzuki, Tsuyoshi Takahashi, Tatsuya Hirose, Masahiko Takikawa
A 80-gbit/s D-type flip-flop circuit using InP HEMT technology. IEEE J. Solid State Circuits 39 (10) (2004)
Yasuhiro Nakasha, Toshihide Suzuki, Hideki Kano, Kouji Tsukashima, Akio Ohya, Ken Sawada, Kozo Makiyama, Tsuyoshi Takahashi, Masahiro Nishi, Tatsuya Hirose, Masahiko Takikawa, Yuu Watanabe
A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology. IEEE J. Solid State Circuits 37 (12) (2002)
Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. IEEE J. Solid State Circuits 36 (9) (2001)