Naoki Hara

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 4

Top Topics

High Efficiency

Spectrum Analysis

Top Venues

IEICE Trans. Electron.

Publications

Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106 (11) (2023)
Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. IEICE Trans. Electron. 106 (10) (2023)
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. (5) (2017)
Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara
300-GHz Amplifier in 75-nm InP HEMT Technology. IEICE Trans. Electron. (5) (2016)
Naoki Hara
Foreword. IEICE Trans. Electron. (5) (2015)
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. IEICE Trans. Electron. (12) (2015)
Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara
Submillimeter-wave InP HEMT amplifiers with current-reuse topology. RWS (2013)
Yasuhiro Nakasha, Naoki Hara, Kiyomichi Araki
Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter. IEICE Trans. Electron. (10) (2011)
Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. IEEE J. Solid State Circuits 36 (9) (2001)