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Toshihiro Ohki
Publication Activity (10 Years)
Years Active: 2005-2023
Publications (10 Years): 4
Top Topics
Imaging Process
High Power
High Efficiency
Metal Oxide Semiconductor
Top Venues
IEICE Trans. Electron.
BCICTS
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Publications
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Yusuke Kumazaki
,
Shiro Ozaki
,
Naoya Okamoto
,
Naoki Hara
,
Yasuhiro Nakasha
,
Masaru Sato
,
Toshihiro Ohki
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
IEICE Trans. Electron.
106 (11) (2023)
Masaru Sato
,
Yusuke Kumazaki
,
Naoya Okamoto
,
Toshihiro Ohki
,
Naoko Kurahashi
,
Masato Nishimori
,
Atsushi Yamada
,
Junji Kotani
,
Naoki Hara
,
Keiji Watanabe
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier.
IEICE Trans. Electron.
106 (10) (2023)
Masaru Sato
,
Yoshitaka Niida
,
Atsushi Yamada
,
Junji Kotani
,
Shiro Ozaki
,
Toshihiro Ohki
,
Naoya Okamoto
,
Norikazu Nakamura
Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers.
IEICE Trans. Electron.
(10) (2021)
Yusuke Kumazaki
,
Keiji Watanabe
,
Toshihiro Ohki
,
Junji Kotani
,
Shiro Ozaki
,
Yoshitaka Niida
,
Kozo Makiyama
,
Yuichi Minoura
,
Naoya Okamoto
,
Norikazu Nakamura
Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates.
BCICTS
(2019)
Kazukiyo Joshin
,
Kozo Makiyama
,
Shiro Ozaki
,
Toshihiro Ohki
,
Naoya Okamoto
,
Yoshitaka Niida
,
Masaru Sato
,
Satoshi Masuda
,
Keiji Watanabe
Millimeter-Wave GaN HEMT for Power Amplifier Applications.
IEICE Trans. Electron.
(10) (2014)
Yusuke Inoue
,
Masaru Sato
,
Toshihiro Ohki
,
Kozo Makiyama
,
Tsuyoshi Takahashi
,
Hisao Shigematsu
,
Tatsuya Hirose
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique.
IEEE J. Solid State Circuits
40 (10) (2005)