Toshihiro Ohki

Publication Activity (10 Years)

Years Active: 2005-2023
Publications (10 Years): 4

Top Topics

Imaging Process

High Efficiency

Metal Oxide Semiconductor

Top Venues

IEICE Trans. Electron.

Publications

Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106 (11) (2023)
Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. IEICE Trans. Electron. 106 (10) (2023)
Masaru Sato, Yoshitaka Niida, Atsushi Yamada, Junji Kotani, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura
Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers. IEICE Trans. Electron. (10) (2021)
Yusuke Kumazaki, Keiji Watanabe, Toshihiro Ohki, Junji Kotani, Shiro Ozaki, Yoshitaka Niida, Kozo Makiyama, Yuichi Minoura, Naoya Okamoto, Norikazu Nakamura
Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates. BCICTS (2019)
Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe
Millimeter-Wave GaN HEMT for Power Amplifier Applications. IEICE Trans. Electron. (10) (2014)
Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique. IEEE J. Solid State Circuits 40 (10) (2005)