High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
Yusuke KumazakiShiro OzakiNaoya OkamotoNaoki HaraYasuhiro NakashaMasaru SatoToshihiro OhkiPublished in: IEICE Trans. Electron. (2023)