Login / Signup

300-GHz Amplifier in 75-nm InP HEMT Technology.

Hiroshi MatsumuraYoichi KawanoShoichi ShibaMasaru SatoToshihide SuzukiYasuhiro NakashaTsuyoshi TakahashiKozo MakiyamaTaisuke IwaiNaoki Hara
Published in: IEICE Trans. Electron. (2016)
Keyphrases
  • case study
  • rapid development
  • cost effective
  • silicon on insulator
  • neural network
  • high speed
  • data processing
  • technological advances
  • cmos technology
  • metal oxide semiconductor