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Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz.

Shinpei YamashitaMichihiko SuharaKenichi KawaguchiTsuyoshi TakahashiMasaru SatoNaoya OkamotoKiyoto Asakawa
Published in: IEICE Trans. Electron. (2019)
Keyphrases
  • computer simulation
  • database
  • neural network
  • parameter values
  • data sets
  • high speed
  • starting point
  • modeling method
  • bi directional
  • forward and backward