Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz.
Shinpei YamashitaMichihiko SuharaKenichi KawaguchiTsuyoshi TakahashiMasaru SatoNaoya OkamotoKiyoto AsakawaPublished in: IEICE Trans. Electron. (2019)