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In Man Kang
ORCID
Publication Activity (10 Years)
Years Active: 2004-2022
Publications (10 Years): 9
Top Topics
Schottky Barrier
Genetic Algorithm
Thin Film
Solar Cell
Top Venues
IEEE Access
ICOIN
ESSDERC
IEICE Trans. Electron.
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Publications
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Seong Eun Kim
,
Min-Hwi Kim
,
Jisu Jang
,
Hyungjin Kim
,
Sungjun Kim
,
Jaewon Jang
,
Jin-Hyuk Bae
,
In Man Kang
,
Sin-Hyung Lee
Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency.
Adv. Intell. Syst.
4 (9) (2022)
Jin Park
,
Min Su Cho
,
Sang Ho Lee
,
Hee Dae An
,
So Ra Min
,
Geon Uk Kim
,
Young Jun Yoon
,
Jae Hwa Seo
,
Sin-Hyung Lee
,
Jaewon Jang
,
Jin-Hyuk Bae
,
In Man Kang
Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure.
IEEE Access
9 (2021)
Sang Ho Lee
,
Won Douk Jang
,
Young Jun Yoon
,
Jae Hwa Seo
,
Hye Jin Mun
,
Min Su Cho
,
Jaewon Jang
,
Jin-Hyuk Bae
,
In Man Kang
Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances.
IEEE Access
9 (2021)
Bongho Jang
,
Hongki Kang
,
Won-Yong Lee
,
Jin-Hyuk Bae
,
In Man Kang
,
Kwangeun Kim
,
Hyuk-Jun Kwon
,
Jaewon Jang
Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach.
IEEE Access
8 (2020)
Min Su Cho
,
Jae Hwa Seo
,
Sang Ho Lee
,
Hwan Soo Jang
,
In Man Kang
Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance.
IEEE Access
8 (2020)
Premkumar Vincent
,
Gwenaelle Cunha Sergio
,
Jaewon Jang
,
In Man Kang
,
Philippe Lang
,
Hyeok Kim
,
Jaehoon Park
,
Muhan Choi
,
Minho Lee
,
Jin-Hyuk Bae
Employing Genetic Algorithm as an Efficient Alternative to Parameter Sweep Based Multi-Layer Thickness Optimization in Solar Cells.
CoRR
(2019)
Young Jun Yoon
,
Jae Hwa Seo
,
Ra Hee Kwon
,
Young In Jang
,
In Man Kang
InGaAs-based junctionless transistor with dual-spacer dielectric for low power loss and high frequency mobile network system.
ICOIN
(2016)
Jae Hwa Seo
,
Young Jun Yoon
,
Ra Hee Kwon
,
Young In Jang
,
In Man Kang
Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems.
ICOIN
(2016)
Ki-Sik Im
,
Chul-Ho Won
,
Jae Hwa Seo
,
In Man Kang
,
Sindhuri Vodapally
,
Yong Soo Lee
,
Jung-Hee Lee
,
Yong-Tae Kim
,
Sorin Cristoloveanu
Novel AlGaN/GaN omega-FinFETs with excellent device performances.
ESSDERC
(2016)
Dong-Hyeok Son
,
Young-woo Jo
,
Ryun-Hwi Kim
,
Chan Heo
,
Jae Hwa Seo
,
Jin Su Kim
,
In Man Kang
,
Sorin Cristoloveanu
,
Jung-Hee Lee
Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution.
ESSDERC
(2015)
Jae Hwa Seo
,
Young Jun Yoon
,
Sung Yoon Kim
,
Young Jae Kim
,
In Man Kang
RF performance of InGaAs-based T-gate junctionless field-effect transistors which applicable for high frequency network systems.
ICOIN
(2015)
Sung Yun Woo
,
Young Jun Yoon
,
Jae Hwa Seo
,
Gwan Min Yoo
,
Seongjae Cho
,
In Man Kang
InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate.
IEICE Trans. Electron.
(7) (2014)
Jae Hwa Seo
,
Jae Sung Lee
,
Yun Soo Park
,
Jung-Hee Lee
,
In Man Kang
Rigorous Design and Analysis of Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric and Tunneling-Boost n-Layer.
IEICE Trans. Electron.
(5) (2013)
Seongjae Cho
,
Hyungjin Kim
,
Min-Chul Sun
,
In Man Kang
,
Byung-Gook Park
,
James S. Harris Jr.
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance.
IEICE Electron. Express
9 (9) (2012)
Jae Sung Lee
,
In Man Kang
Layer.
IEICE Trans. Electron.
(5) (2012)
Seongjae Cho
,
In Man Kang
,
Kyung Rok Kim
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs.
IEICE Electron. Express
7 (19) (2010)
Hyuck In Kwon
,
In Man Kang
,
Byung-Gook Park
,
Jong Duk Lee
,
Sang Sik Park
,
Jung Chak Ahn
,
Yong Hee Lee
Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements.
Microelectron. Reliab.
44 (1) (2004)