Min-Chul Sun

Publication Activity (10 Years)

Years Active: 2012-2023
Publications (10 Years): 1

Top Topics

Enterprise Application

Mathematical Analysis

Schottky Barrier

Highly Reliable

Top Venues

IEICE Trans. Electron.

VLSI Technology and Circuits

Publications

Kihwang Son, Seulki Park, Kyunghoon Jung, Jun-Gyu Kim, Younggun Ko, Keonyong Cheon, Changkeun Yoon, Jiho Kim, Jaehun Jeong, Taehun Myung, Changmin Hong, Weonwi Jang, Min-Chul Sun, Sungil Jo, Ju-Youn Kim, Byungmoo Song, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong
Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells. VLSI Technology and Circuits (2023)
Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Byung-Gook Park
Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel. IEICE Trans. Electron. (5) (2013)
Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Jongho Lee, Hyungcheol Shin, Byung-Gook Park
L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications. IEICE Trans. Electron. (5) (2013)
Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park
-Control Doping Region. IEICE Trans. Electron. (5) (2012)
Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park
Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors. IEICE Trans. Electron. (5) (2012)
Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris Jr.
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance. IEICE Electron. Express 9 (9) (2012)