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Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors.
Min-Chul Sun
Hyun Woo Kim
Sang Wan Kim
Garam Kim
Hyungjin Kim
Byung-Gook Park
Published in:
IEICE Trans. Electron. (2012)
Keyphrases
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comparative study
field effect transistors
steady state
high density
schottky barrier
mathematical analysis
semiconductor devices
noisy channel
high speed
markov chain
simulation model
multi channel
information systems
databases
chip design
video sequences
case study
multiple access
database