Min-Hwi Kim

Publication Activity (10 Years)

Years Active: 2015-2024
Publications (10 Years): 7

Top Topics

Monte Carlo Simulation

Synaptic Plasticity

Top Venues

Adv. Intell. Syst.

IEICE Trans. Electron.

IEICE Electron. Express

Publications

Misbaudeen Aderemi Adesanya, Hammed Obasekore, Anis Rabiu, Wook-Ho Na, Qazeem Opeyemi Ogunlowo, Timothy Denen Akpenpuun, Min-Hwi Kim, Hyeon-Tae Kim, Bo-Yeong Kang, Hyun-Woo Lee
Deep reinforcement learning for PID parameter tuning in greenhouse HVAC system energy Optimization: A TRNSYS-Python cosimulation approach. Expert Syst. Appl. 252 (2024)
Sungjun Oh, Hyungjin Kim, Seong Eun Kim, Min-Hwi Kim, Hea-Lim Park, Sin-Hyung Lee
Biodegradable and Flexible Polymer-Based Memristor Possessing Optimized Synaptic Plasticity for Eco-Friendly Wearable Neural Networks with High Energy Efficiency. Adv. Intell. Syst. 5 (5) (2023)
Min-Hwi Kim, Sin-Hyung Lee, Sungjun Kim, Byung-Gook Park
A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic System. IEEE Access 10 (2022)
Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee
Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency. Adv. Intell. Syst. 4 (9) (2022)
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation. IEEE Access 8 (2020)
Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park
Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices. IEICE Electron. Express 16 (16) (2019)
Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell. IEICE Trans. Electron. (5) (2016)
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals. IEICE Trans. Electron. (5) (2015)