Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements.
Hyuck In KwonIn Man KangByung-Gook ParkJong Duk LeeSang Sik ParkJung Chak AhnYong Hee LeePublished in: Microelectron. Reliab. (2004)
Keyphrases