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Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance.

Min Su ChoJae Hwa SeoSang Ho LeeHwan Soo JangIn Man Kang
Published in: IEEE Access (2020)
Keyphrases
  • radio frequency
  • low cost
  • similarity measure
  • multiscale