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Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances.

Sang Ho LeeWon Douk JangYoung Jun YoonJae Hwa SeoHye Jin MunMin Su ChoJaewon JangJin-Hyuk BaeIn Man Kang
Published in: IEEE Access (2021)
Keyphrases
  • high density
  • thin film
  • si sio
  • chemical vapor deposition
  • high speed
  • data center
  • main memory
  • low cost
  • real time
  • object boundaries
  • plasma etching
  • database
  • database systems
  • low voltage
  • field effect transistors