Geoffrey Yeap

Publication Activity (10 Years)

Years Active: 2010-2023
Publications (10 Years): 5

Top Topics

Global Minimization

Top Venues

IEEE Trans. Circuits Syst. I Regul. Pap.

VLSI Technology and Circuits

Publications

Nick Zhang, Young Suk Kim, Peter Hsu, Samsoo Kim, Derek Tao, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li, Tsung-Yung Jonathan Chang
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology. VLSI Technology and Circuits (2023)
Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li
Applications. IEEE J. Solid State Circuits 56 (1) (2021)
Jonathan Chang, Yen-Huei Chen, Gary Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. ISSCC (2020)
S. C. Song, J. Xu, D. Yang, K. Rim, P. Feng, Jerry Bao, J. Zhu, J. Wang, G. Nallapati, Mustafa Badaroglu, P. Narayanasetti, B. Bucki, J. Fischer, Geoffrey Yeap
Unified Technology Optimization Platform using Integrated Analysis (UTOPIA) for holistic technology, design and system co-optimization at <= 7nm nodes. VLSI Circuits (2016)
Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung
Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology. IEEE Trans. Circuits Syst. I Regul. Pap. (7) (2016)
Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung
Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. IEEE Trans. Very Large Scale Integr. Syst. 23 (11) (2015)
S. C. Song, J. Xu, N. N. Mojumder, K. Rim, D. Yang, Jerry Bao, J. Zhu, J. Wang, Mustafa Badaroglu, V. Machkaoutsan, P. Narayanasetti, B. Bucki, J. Fischer, Geoffrey Yeap
Holistic technology optimization and key enablers for 7nm mobile SoC. VLSIC (2015)
Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung
SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit. IEEE Trans. Circuits Syst. I Regul. Pap. (6) (2015)
N. N. Mojumder, S. C. Song, K. Rim, J. Xu, J. Wang, J. Zhu, M. Vratonjic, K. Lin, Martin Saint-Laurent, Paul Bassett, Geoffrey Yeap
Transistor-interconnect mobile system-on-chip co-design method for holistic battery energy minimization. VLSIC (2015)
Geoffrey Yeap
Technology-design-manufacturing co-optimization for advanced mobile SoCs. CICC (2014)
Jason Woo, P. Y. Chien, Frank Yang, Seung Chul Song, P. R. Chidi Chidambaram, Joseph Wang, Geoffrey Yeap
Improved device variability in scaled MOSFETs with deeply retrograde channel profile. Microelectron. Reliab. 54 (6-7) (2014)
Seung Chul Song, M. Abu-Rahma, Geoffrey Yeap
FinFET based SRAM bitcell design for 32 nm node and below. Microelectron. J. 42 (3) (2011)
Ming-Ta Yang, Yang Du, Charles Teng, Tony Chang, Eugene Worley, Ken Liao, You-Wen Yau, Geoffrey Yeap
BSIM4-based lateral diode model for LNA co-designed with ESD protection circuit. ISQED (2010)